Mechanism Analysis of Material Remove and Subsurface Layer Damages for SiC during Nanocutting Processes

doi:10.3969/j.issn.1004-132X.2025.10.019

Abstract

Abstract:

The plastic removal mechanism of SiC was investigated by molecular dynamics method and micro-cutting experiments. It is found that the high lattice distortion effectiveness of SiC materials induced by extrusion force may lead to the reverse flow trend of the atomic vector displacement in elastic stages during nanoscale cutting， and the eddy current trend of the atomic vector displacement occurs in elastoplasticity deformation stages. The plastic deformation-mediated amorphous layer coverages， the phase transformation from cubic structure to wurtzite structure， and the formation of shear bands and cracks on the machined surfaces of SiC nanocutting obtained from molecular dynamics simulations are consistent with the experimental results.The random surface roughness in machined surface areas is easy to form a stepped type， which increases as cutting temperature and speed increases. The plastic removal mechanism in nanocutting processes is that the high pressure and high temperature induced by loads in closely contact areas between cutting tool and SiC workpiece result in the shear band flow outflow from the rank face and the cutting morphology and configuration are formed finally. The subsurface damage degree gradually decreases with cutting distance and cutting speed increases. Nevertheless， the subsurface damage degree gradually increases with the increase of cutting temperature and depth. Furthermore， with cutting speed increase， chip morphology of SiC materials gradually changed from convolution state to bar state， and the chip morphology is of mainly convolution as the temperature of system increases.

Key words: micro-structural evolution, molecular dynamics simulation, plastic remove, phase transition, hard brittle material

摘要：

采用分子动力学法与微观切削实验法对SiC塑性去除机理展开研究。研究发现，切削弹性期的SiC受挤压诱导产生的晶格高畸变效应导致原子矢量位移出现与切削运动方向相反的回流运动趋势，而切削中期弹塑性变形区的原子矢量位移出现涡流运动趋势。研究结果表明，分子动力学模拟的SiC纳米切削已加工表面的塑性变形介导的非晶层覆盖、立方结构向闪锌矿结构的相变转化、剪切带与裂纹形成同实验结果保持一致，已加工表面区的台阶式随机表面粗糙度随着切削温度和速度的增加而增大。切削塑性去除机理为：刀具和工件紧密接触区的高温高应力会诱使剪切带从前刀面流出，形成切削形貌构型。随着切削距离和切削速度的增加，亚表层损伤度逐渐减小，而随着切削温度和深度的增加，亚表层损伤度逐渐增大；随着切削速度的增加，切屑形貌由卷积形态逐渐变成条状形态；随着体系温度的上升，切屑形貌以卷积形态为主。

关键词: 微结构演化, 分子动力学模拟, 塑性去除, 相变转化, 硬脆材料

CLC Number:

TH114.1

Jingjing CHEN, Sha CHEN, Haiyan ZHU, Junjun YUAN, Zeyu LUO. Mechanism Analysis of Material Remove and Subsurface Layer Damages for SiC during Nanocutting Processes[J]. China Mechanical Engineering, 2025, 36(10): 2312-2321.

陈晶晶, 陈莎, 朱海燕, 袁军军, 罗泽宇. SiC硬脆材料纳米切削的亚表层损伤与塑性去除机理探析[J]. 中国机械工程, 2025, 36(10): 2312-2321.

Figures/Tables 13

Fig.1 Molecular dynamic model of SiC material on nano cutting process

Tab. 1 Simulation parameter setting of SiC material on nano cutting process

模拟条件	参数设置
模型尺寸L_X ×L_Y ×L_Z	5.3 nm×48 nm×23 nm
切削速度v	50，100，200，250，400 m/s
切削深度d	2.0，2.6，3.5，4.4 nm
半径R	2.5 nm
恒温层T	1，150，300，500，800 K
前角β	0°，15°，25°
后角α	0°，15°，25°
时间步长	1fs

Fig.2 Effect of cutting speed and cutting depth on SiC horizontal cutting force and normal force

Fig.3 Effects of tool geometry parameters and temperature on SiC horizontal cutting force and normal force

Fig.4 Quantitative influence of cutting parameters on SiC mean cutting force and normal force

Fig.5 Effect of cutting parameters on micro-structure evolution and subsurface damage of SiC

Fig.6 Effect of cutting parameters on radial distribution function of SiC with hard and brittle features

Fig.7 Comparison of experimental and simulated results of SiC hard and brittle materials

Fig.8 Effect of cutting parameters on dislocation length and temperature of SiC hard and brittle materials

Fig.9 Effect of cutting parameters on phase transition and displacement amplitude of SiC hard and brittle materials

Fig.10 Effect of cutting parameters on atomic migration trajectories of SiC hard and brittle materials

Fig.11 Stress quantization effect of cutting parameters on cutting direction of SiC hard and brittle materials

Fig.12 Effect of cutting parameters on stress distribution of SiC hard and brittle materials

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