中国机械工程 ›› 2026, Vol. 37 ›› Issue (8): 1937-1946.DOI: 10.3969/j.issn.1004-132X.2026.08.013
• 机械基础工程 • 上一篇
收稿日期:2025-03-17
出版日期:2026-08-25
发布日期:2026-09-17
通讯作者:
文东辉
作者简介:曹伟婷,女,2000年生,硕士研究生。研究方向为超精密加工、磨料流抛光介质。
基金资助:
CAO Weiting1,2, WEN Donghui1,2(
), CAI Yaojie1,2
Received:2025-03-17
Online:2026-08-25
Published:2026-09-17
Contact:
WEN Donghui
摘要:
以甲基乙烯基硅橡胶为基体,添加二甲基硅油、碳化硅(SiC)磨料等,研制了一种新型磨料流抛光介质,并系统评估其流变性能与加工效果。通过微观形貌分析与流变测试(蠕变柔量、应力松弛、动态模量扫描),主要研究了介质组分对其黏弹性行为的影响,发现提高加工油含量可增强流动性,但过量(大于20%)会导致弹性下降,介质二(30%基体、20%加工油、45%SiC、5%热稳定剂)在宽频范围内(86.9~628 rad/s)表现出弹性主导(
中图分类号:
曹伟婷, 文东辉, 蔡姚杰. 甲基乙烯基磨料流抛光介质的研制及性能分析[J]. 中国机械工程, 2026, 37(8): 1937-1946.
CAO Weiting, WEN Donghui, CAI Yaojie. Development and Performance Analysis of Methyl Vinyl Abrasive Flow Polishing Media[J]. China Mechanical Engineering, 2026, 37(8): 1937-1946.
| 密度/(g·cm | 弹性模量/GPa | 显微硬度/HV | 熔点/℃ |
|---|---|---|---|
| 3.22 | 192 | 2840~3320 | 2700 |
表1 碳化硅磨料物理性能
Tab.1 Physical properties of silicon carbide abrasives
| 密度/(g·cm | 弹性模量/GPa | 显微硬度/HV | 熔点/℃ |
|---|---|---|---|
| 3.22 | 192 | 2840~3320 | 2700 |
| 介质 | 介质成分/% | |||
|---|---|---|---|---|
| 基体 | 加工油 | 磨粒SiC | 热稳定剂 | |
| 介质一 | 40 | 10 | 45 | 5 |
| 介质二 | 30 | 20 | 45 | 5 |
| 介质三 | 20 | 30 | 45 | 5 |
| 介质四 | 10 | 40 | 45 | 5 |
表2 不同成分的甲基乙烯基磨料流抛光介质
Tab.2 Methyl vinyl abrasive flow polishing media with different compositions
| 介质 | 介质成分/% | |||
|---|---|---|---|---|
| 基体 | 加工油 | 磨粒SiC | 热稳定剂 | |
| 介质一 | 40 | 10 | 45 | 5 |
| 介质二 | 30 | 20 | 45 | 5 |
| 介质三 | 20 | 30 | 45 | 5 |
| 介质四 | 10 | 40 | 45 | 5 |
图16 甲基乙烯基磨料流介质与丁苯抛光介质用前后动态频率扫描测试
Fig.16 Dynamic frequency sweep tests before and after use for methyl vinyl abrasive flow medium and styrene-butadiene polishing medium
| 抛光介质 | 甲基乙烯基抛光介质 | 丁苯抛光介质 |
|---|---|---|
| 入口压力/MPa | 3 | 3 |
| 螺杆转速/(r·min-1) | 120 | 120 |
| 加工时间/min | 100 | 100 |
| 磨料粒径 | 240# | 240# |
表3 试验参数
Tab.3 Test parameters
| 抛光介质 | 甲基乙烯基抛光介质 | 丁苯抛光介质 |
|---|---|---|
| 入口压力/MPa | 3 | 3 |
| 螺杆转速/(r·min-1) | 120 | 120 |
| 加工时间/min | 100 | 100 |
| 磨料粒径 | 240# | 240# |
时间/ min | 抛光初始 Sa/nm | 甲基乙烯基抛光介质抛光后Sa/nm | 丁苯抛光介质抛光后Sa/nm | 甲基乙烯基抛光介质的改善率/% | 丁苯抛光介质的改善率/% |
|---|---|---|---|---|---|
| 25 | Samethyl=362.14 Sastyrene=340.36 | 97.46 | 132.37 | 73.20 | 61.11 |
| 50 | 69.24 | 114.76 | 80.88 | 66.28 | |
| 75 | 50.12 | 100.52 | 85.27 | 70.47 | |
| 100 | 39.45 | 86.26 | 89.23 | 74.71 |
表4 两种介质加工前后Sa改善率
Tab.4 Improvement rate of Sa before and after processing with two different media
时间/ min | 抛光初始 Sa/nm | 甲基乙烯基抛光介质抛光后Sa/nm | 丁苯抛光介质抛光后Sa/nm | 甲基乙烯基抛光介质的改善率/% | 丁苯抛光介质的改善率/% |
|---|---|---|---|---|---|
| 25 | Samethyl=362.14 Sastyrene=340.36 | 97.46 | 132.37 | 73.20 | 61.11 |
| 50 | 69.24 | 114.76 | 80.88 | 66.28 | |
| 75 | 50.12 | 100.52 | 85.27 | 70.47 | |
| 100 | 39.45 | 86.26 | 89.23 | 74.71 |
时间/ min | 抛光初始 Sz/nm | 甲基乙烯基抛光介质抛光后Sz/nm | 丁苯抛光介质抛光后Sz/nm | 甲基乙烯基抛光介质改善率/% | 丁苯抛光介质改善率/% |
|---|---|---|---|---|---|
| 25 | Szmethyl=2777.34 Szstyrene=2663.56 | 1065 | 1036 | 61.65 | 61.10 |
| 50 | 745 | 923 | 73.17 | 65.34 | |
| 75 | 634 | 837 | 77.17 | 68.57 | |
| 100 | 459 | 709 | 83.58 | 73.37 |
表5 两种介质加工前后Sz改善率
Tab.5 Improvement rate of Sz before and after processing with two different media
时间/ min | 抛光初始 Sz/nm | 甲基乙烯基抛光介质抛光后Sz/nm | 丁苯抛光介质抛光后Sz/nm | 甲基乙烯基抛光介质改善率/% | 丁苯抛光介质改善率/% |
|---|---|---|---|---|---|
| 25 | Szmethyl=2777.34 Szstyrene=2663.56 | 1065 | 1036 | 61.65 | 61.10 |
| 50 | 745 | 923 | 73.17 | 65.34 | |
| 75 | 634 | 837 | 77.17 | 68.57 | |
| 100 | 459 | 709 | 83.58 | 73.37 |
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