Abstract: In the processes of chemical mechanical plane polishing（CMPP）， the polishing liquid was affected by centrifugal forces of polishing disk， and the effective utilization rate was low， and the surfaces of polishing disks were unevenly distributed， thus the efficiency and quality of plane polishing were affected. A same layer arrangement of eletrodes-dielectrophoresis planar polishing（SLAE-DEPP）method was proposed herein. COMSOL Multiphysics was used to simulate the potential changes, and the electric field square gradient change of the closed ring electrode and the non-closed ring electrode under SLAEs. The simulation results show that there are changes in both of the radius ρ directions and the angle θ directions. And the maximum electric field square gradient change at the opening is about 1.5 times than that of the closed electrode methods. The non-closed ring SLAEs was used to make the polishing disc， and the experimental platform was built to carry out the polishing experiments. The experimental results show that compared with traditional CMPP polishing， the SLAE-DEPP method polishes a silicon wafer with a diameter of 76.2 mm. After polishing for 6 h， the values of surface roughness Ra at workpiece  center decrease from the initial 690 nm to less than 1 nm， the workpiece flatness（RMS value）is as 0.268 μm， the workpiece material removal rate (MRR) increases by nearly 27.3%， the workpiece surface is removed uniformly to mirror surface， polishing efficiency and polishing quality are both better than that of traditional CMPP method. 

Key words: dielectrophoresis effect, planar polishing, same layer arrangement of electrod(SLAE), uniformity

摘要： 针对化学机械平面抛光（CMPP）过程中，抛光液受抛光盘旋转离心力作用，抛光液有效利用率低、在抛光盘表面分布不均，从而影响平面抛光效率和质量的问题，提出了一种电极同层布置方式的介电泳平面抛光方法（SLAE-DEPP）。采用COMSOL Multiphysics对电极同层布置方式下封闭式圆环电极和非封闭式圆环电极的电势变化和电场强度平方梯度变化进行仿真，仿真结果表明，非封闭式圆环电极方式的电场强度平方梯度在半径ρ方向和角度θ方向都存在变化，在开口处最大电场强度平方梯度变化约为封闭式电极方式电场强度平方梯度变化的1.5倍。采用非封闭圆环电极同层布置方式制作抛光盘，搭建实验平台进行抛光实验，实验结果表明，与传统CMPP抛光相比，SLAE-DEPP方式抛光直径为76.2 mm硅片，抛光6 h后，工件中心处表面粗糙度Ra从初始690 nm下降到1 nm以下，工件平面度（RMS值）为0.268 μm，工件材料去除率（MRR）提高了近27.3%，工件表面去除均匀达到镜面，抛光效率和抛光质量均优于传统CMPP方式。

关键词: 介电泳效应, 平面抛光, 电极同层布置, 均匀性