单晶SiC的电助光催化抛光及去除机理

摘要/Abstract

摘要： 为满足电子半导体等领域对SiC超光滑、无损伤和材料高效去除的要求，提出了电助光催化抛光SiC的新方法。研究了光催化剂种类及其pH值对抛光液氧化性和抛光效果的影响，讨论了材料的去除机理。结果表明：以p25型TiO2为光催化剂配制抛光液所获得的最大氧化还原电位为633.11 mV，材料去除率为1.18 μm/h，表面粗糙度Ra=0.218 nm；抛光后SiC表面氧化产物中，Si-C-O、Si-O和Si4C4O4的含量明显增加，SiC表面被氧化并被机械去除是主要的材料去除方式。

关键词: SiC, 电助光催化抛光, TiO2, 抛光液, 去除机理

Abstract: A new electrical enhanced photocatalysis polishing method for SiC was proposed herein to meet the requirements of ultra-smooth, non-damaging, and highly efficient in the fields of electronic semiconductor. Effects of different type photocatalysts and pH values on the oxygenation, and polishing performance of the slurries were studied. Material removal mechanism was discussed. The results show that the maximum oxidation-reduction potential of p25 type TiO2 slurries is as 633.11 mV, material removal rate is as 1.18 μm/h, and surface roughness Ra is as 0.218 nm. The proportion of oxidized species such as Si-C-O, Si-O, and Si4C4O4 increase noticeably on the polished silicon carbide surfaces, which indicates that the oxidation combined with mechanical action is main material removal mechanism.

Key words: SiC, electrical enhanced photocatalysis polishing, TiO2, slurry, removal mechanism

中图分类号:

TH161

何艳;苑泽伟;段振云;王雪. 单晶SiC的电助光催化抛光及去除机理[J]. 中国机械工程.

HE Yan;YUAN Zewei;DUAN Zhenyun;WANG Xue. Electrical Enhanced Photocatalysis Polishing and Removal Mechanism for Single Crystal SiC[J]. China Mechanical Engineering.

参考文献

[1]CHEN X F, LI J, MA D Y, et al. Fine Machining of Large-diameter 6H-SiC Wafer[J]. Journal of Materials Science & Technology, 2006, 22 (5): 681-684.

[2]盛况, 郭清, 张军明，等. SiC电力电子器件在电力系统的应用展望[J]. 中国电机工程学报, 2012, 32(30)：1-7.

SHENG Kuang, GUO Qing, ZHANG Junming, et al. Development and Prospect of SiC Power Devices in Power Grid[J]. Proceedings of CSEE, 2012, 32(30): 1-7.

[3]NITTA H, ISOBE A, HONG P J, et al. Research on Reaction Method of High Removal Rate Chemical Mechanical Polishing Slurry for 4H-SiC Substrate[J]. Japanese Journal of Applied Physics, 2011, 50(4): 10.1143/JJAP.50.046501.

[4]LEE H, PARK B, JEONG S, et al. The Effect of Mixed Abrasive Slurry on CMP of 6H-SiC Substrates[J]. Journal of Ceramic Processing Research. 2009, 10 (3): 378-381.

[5]林广川, 郭丹, 解国新, 等. 抛光液中离子浓度对化学机械抛光过程的影响[J]. 中国表面工程, 2015，28(4)：54-61.

LIN Guangchuan, GUO Dan, XIE Guoxin, et al. Influence of Ionic Concentration of Slurry on Process of Chemical Mechanical Polishing[J]. China Surface Engineering, 2015, 28(4): 54-61.

[6]CHEN G M, NI Z F, XU L J, et al. Performance of Colloidal Silica and Ceria Based Slurries on CMP of Si-face 6H-SiC Substrates[J]. Applied Surface Science, 2015, 359: 664-668.

[7]ARIMA K, HARA H, MURATA J, et al. Atomic-scale Flattening of SiC Surfaces by Electroless Chemical Etching in HF Solution with Pt Catalyst[J]. Applied Physics Letters, 2007, 90(20): 10.1063/1.2739084.

[8]YAMAMURA K, TAKIGUCHI T, UEDA M, et al. Plasma Assisted Polishing of Single Crystal SiC for Obtaining Atomically Flat Strain-free Surface[J]. CIRP Annals—Manufacturing Technology, 2011, 60(1): 571-574.

[9]DENG H, YAMAMURA K. Atomic-scale Flattening Mechanism of 4H-SiC (0001) in Plasma Assisted Polishing[J]. CIRP Annals—Manufacturing Technology, 2013, 62(1): 575-578.

[10]DENG H, ENDO K, YAMAMURA K. Damage-free Finishing of CVD-SiC by a Combination of Dry Plasma Etching and Plasma-assisted Polishing[J]. International Journal of Machine Tools & Manufacture, 2016, 115: 38-46.

[11]YAMAMURA K, HOSOYA K, IMANISHI Y, et al. Preliminary Study on Highly Efficient Polishing of 4H-SiC by Utilization of Anodic Oxidation[J]. Advanced Materials Research, 2014, 1017: 509-514.

[12]MURATA J, YODOGAWA K, BAN K. Polishing-pad-free Electrochemical Mechanical Polishing of Single Crystalline SiC Surfaces Using Polyurethane CeO2 Core-shell Particles[J]. International Journal of Machine Tools & Manufacture, 2017, 114: 1-7.

[13]SUNG H K, WANG C, KIM N Y. Ultra-smooth BaTiO3 Surface Morphology Using Chemical Mechanical Polishing Technique for High-k Metal-insulator-metal Capacitors[J]. Materials Science in Semiconductor Processing, 2015, 40: 516-522.

[14]CHOU W L, WANG C T, CHANG W C, et al. Adsorption Treatment of Oxide Chemical Mechanical Polishing Wastewater from a Semiconductor Manufacturing Plant by Electrocoagulation[J]. Journal of Hazardous Materials, 2010, 180(1/3): 217-224.

[15]GHATAK H R. Advanced Oxidation Processes for the Treatment of Biorecalcitrant Organics in Wastewater[J]. Critical Reviews in Environmental Science & Technology, 2014, 44(11): 1167-1219.

[16]FAGAN R, MCCORMACK D E, DIONYSIOU D D, et al. A Review of Solar and Visible Light Active TiO2 Photocatalysis for Treating Bacteria, Cyanotoxins and Contaminants of Emerging Concern[J]. Materials Science Semiconductor Processing, 2016, 42(1): 2-14.

[17]朱四美, 张贵锋, 侯晓多, 等. 反应磁控溅射法直接制备光催化纳米TiO2薄膜[J]. 中国表面工程，2012, 25(4): 56-61.

ZHU Simei, ZHANG Guifeng, HOU Xiaoduo, et al. Photocatalytic TiO2 Thin Films Directly Prepared by Reactive Magnetron Sputtering[J]. China Surface Engineering, 2012, 25(4): 56-61.

[18]贺明宇. 以氧化还原电位控制Fenton反应处理模拟苯酚废水[D]. 西安：西安建筑大学, 2010.

HE Mingyu. Using Oxidation-reduction Potential Control Fenton Oxidation for Phenol Wastewater Treatment[D]. Xian: Xian University of Architecture and Technology, 2010.

[19]PAN G, ZHOU Y, LUO G, et al. Chemical Mechanical Polishing (CMP) of On-axis Si-face 6H-SiC Wafer for Obtaining Atomically Flat Defect-free Surface[J]. Journal of Material Science: Material in Electronics. 2013, 24(12): 5040-5047.

[20]CHEN G, NI Z, XU L, et al. Performance of Colloidal Silica and Ceria Based Slurries on CMP of Si-face 6H-SiC Substrates[J]. Applied Surface Science, 2015, 359: 664-668.

[21]POURASAD J, EHSANI N, KHALIFESOLTANI S A. Preparation and Characterization of SiO2, Thin Film and SiC Nanofibers to Improve of Graphite Oxidation Resistance[J]. Journal of the European Ceramic Society, 2016, 36(16): 3947-3956.

[22]WATANABE J, TOUGE M, SAKAMOTO T. Ultraviolet-irradiated Precision Polishing of Diamond and Its Related Materials[J]. Diamond & Related Materials, 2013, 39(10): 14-19.

[23]LAGUDU U R K, ISONO S, KRISHNAN S, et al. Role of Ionic Strength in Chemical Mechanical Polishing of Silicon Carbide Using Silica Slurries[J]. Colloids & Surfaces a Physicochemical & Engineering Aspects, 2014, 445(6): 119-127.