钛合金管内表面的化学辅助磁性剪切增稠抛光实验研究

doi:10.3969/j.issn.1004-132X.2025.12.005

摘要/Abstract

摘要：

提出基于化学辅助的磁性剪切增稠抛光方法，设计并制备了一种新型抛光液。采用单因素实验方案研究了H₂O₂质量分数、pH值和表面活性剂质量分数对钛合金（TA2）管内表面粗糙度的影响规律。在H₂O₂质量分数为0.1%、pH值为5和表面活性剂质量分数为0.3%的最佳条件下，经过90 min的抛光，钛合金管内表面的表面粗糙度Ra从701 nm降低至56 nm。扫描电镜和超景深显微镜观测发现，化学辅助磁性剪切增稠抛光方法能够显著减少加工过程中产生的凸峰和划痕，获得无缺陷的光滑表面。

关键词: 钛合金管, 抛光, 磁性剪切增稠, 化学辅助, 表面粗糙度, 材料去除率

Abstract:

A magnetic shear thickening polishing method was proposed based on chemical assistance， and a novel polishing slurry was designed and prepared. A single-factor experiment was employed to study the impacts of H₂O₂ concentration， pH value， and surfactant concentration on the surface roughness of titanium alloy tube inner surfaces. Under the optimal conditions of 0.1% mass fraction H₂O₂ concentration， pH value of 5， and 0.3% mass fraction surfactant concentration， the value of surface roughness of titanium alloy tube inner surfaces is significantly reduced from 701 nm to 56 nm after 90 min polishing. Scanning electron microscopy and ultra-depth-of-field microscopy reveal that the chemical-assisted magnetorheological shear thickening polishing（CMSTP） may significantly remove the convex peaks and scratches generated during processing， resulting in a defect-free smooth surface.

Key words: titanium alloy tube, polishing, magnetorheological shear thickening, chemical-assisted, surface roughness, material removal rate

中图分类号:

TH16

杨自豪, 范增华, 张翔, 高军. 钛合金管内表面的化学辅助磁性剪切增稠抛光实验研究[J]. 中国机械工程, 2025, 36(12): 2846-2853.

Zihao YANG, Zenghua FAN, Xiang ZHANG, Jun GAO. Research on Chemical-assisted Magnetorheological Shear Thickening Polishing of Titanium Alloy Tube Inner Surfaces[J]. China Mechanical Engineering, 2025, 36(12): 2846-2853.

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链接本文: https://www.cmemo.org.cn/CN/10.3969/j.issn.1004-132X.2025.12.005

https://www.cmemo.org.cn/CN/Y2025/V36/I12/2846

图/表 14

图1 CMSTP抛光原理图

Fig.1 Polishing principle of the CMSTP

图2 CMSTP微尺度抛光过程

Fig.2 Micro-scale polishing process in CMSTP

图3 CMSTP过程中单个磨粒的力分布

Fig.3 Force distribution of single abrasive in CMSTP process

图4 CMSTP的实验装置

Fig.4 Experimental device of CMSTP

表1 实验参数

Tab.1 Experimental parameters

参数名称	数值
工件转速/（r·min^-1）	1000
进给速度/（mm·min^-1）	100
H₂O₂质量分数/%	0.05，0.10，0.15
pH值	3，5，7，9
表面活性剂质量分数/%	0.1，0.3，0.5
测量时间/min	15，30，45，60，75，90
磨粒尺寸/μm	30
CIPs尺寸/μm	100
PHHP 质量分数/%	40
初始表面粗糙度Ra/nm	680~720
工件尺寸/mm	ϕ7×285
工件材料	TA2钛合金

图5 CMSTPs的制备流程

Fig.5 The preparation process of CMSTPs

图6 CMSTPs的显微图像

Fig.6 Microscopic image of CMSTPs

表2 抛光液的具体成分参数

Tab.2 Composition parameters of polishing slurry

参数	CMSTPs	MSTPs
PHHP 质量分数/%	40	40
CIPs 质量分数/%	5	5
SiC 质量分数/%	15	15
去离子水质量分数/%	39.6	40
pH 值	5	7
H₂O₂质量分数/%	0.1
表面活性剂质量分数/%	0.3

图7 表面粗糙度和材料去除质量随时间变化

Fig.7 Surface roughness and material removal mass variation with time

图8 H2O2质量分数对表面粗糙度的影响

Fig.8 Effect of H2O2 mass fraction on surface roughness

图9 pH值对表面粗糙度的影响

Fig.9 Effect of pH value on surface roughness

图10 表面活性剂质量分数对表面粗糙度的影响

Fig.10 Effect of surfactant mass fraction on surface roughness

图11 CMSTP前后内表面的SEM图像

Fig.11 SEM images of inner surface before and after CMSTP polishing

图12 CMSTP前后的表面形貌

Fig.12 Surface morphology before and after CMSTP polishing

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