Chemical Mechanical Polishing of Soft-brittle CdZnTe Wafers Using a Developed Environment-friendly Solution

Abstract

Abstract:

A strategy consisting of fixed-abrasive lapping and a developed environment-friendly solution was proposed for polishing cadmium zinc telluride(CdZnTe or CZT). This was to eliminate the disadvantages for conventional machining method including free abrasive lapping, polishing and chemical mechanical polishing on CZT wafers. Waterproof paper of alumina with mesh size of 3000 was employed as fixed-abrasive lapping pad. Lapping experiments were conducted at a pressure of 17kPa on CZT wafers. The rotation speeds for polishing plate and pad were as 80r/min respectively, and the duration was as 5min during lapping experiments. The developed environment-friendly solution consisted of peroxide, silica, and natural orange juice that was used for pH modulator. Chemical mechanical polishing was carried out at a pressure of 28kPa, rotation speeds of 60r/min for both of polishing pad and plate, and a duration of 30min. The experimental results show that ultra-smooth polished surfaces are achieved, where surface roughness Ra, root mean square(rms), and peak-to-valley(PV) values are as 0.568nm, 0.724nm, and 6.061nm, respectively.

Key words: CdZnTe, fixed abrasive, green and environment-friendly solution, chemical mechanical polishing

摘要：

针对软脆碲锌镉晶片的传统加工工艺“游离磨料-抛光-化学机械抛光”存在的缺点，提出“固结磨料研磨-新型绿色环保抛光液化学机械抛光”新方法。固结磨料研磨工艺为：采用3000号刚玉防水砂纸，压力为17kPa,抛光盘与抛光垫转速均为80r/min,研磨时间为5min。新型绿色环保抛光液含有双氧水和硅溶胶，采用天然桔子汁作为pH值调节剂。化学机械抛光工艺为:采用自行研制的化学机械抛光液，绒毛抛光垫，抛光压力为28kPa,抛光盘与抛光垫转速均为60r/min,抛光时间为30min。试验结果表明，经过上述加工可获得超光滑的表面，表面粗糙度算术平均值、均方根值、峰谷值分别可以达到0.568nm、0.724nm、6.061nm。

关键词: 碲锌镉, 固结磨料, 绿色环保抛光液, 化学机械抛光

CLC Number:

TH117

Zhang Zhenyu, Song Yaxing, Xu, Chaoge. Chemical Mechanical Polishing of Soft-brittle CdZnTe Wafers Using a Developed Environment-friendly Solution[J]. China Mechanical Engineering, 2014, 25(22): 3008-3011.

张振宇, 宋亚星, 徐朝阁. 新型环保抛光液的制备及其对软脆碲锌镉晶片的化学机械抛光[J]. 中国机械工程, 2014, 25(22): 3008-3011.

References

[1]郭瑞萍，李静，孙葆森. 国外红外探测器材料技术新进展[J]. 兵器材料科学与工程，2009，32（3):96-99.
Guo Ruiping,Li Jing,Sun Baosen.New Development of Foreign Infrared Detector Material Technology[J].Ordance Material Science and Engineering,2009,32(3):96-99.
[2]史衍丽.第三代红外探测器的发展与选择[J].红外技术,2013,35（1）:1-8.
Shi Yanli.Choice and Development of the Third-Generation Infrared Detectors[J].Infrared Technology,2013,35(1):1-8.
[3]储向峰,汤丽娟,董永平，等.化学机械抛光在光学晶体加工中的应用[J].金刚石与磨料磨具工程,2012,32（1）:23-28.
Chu Xiangfeng,Tang Lijuan,Dong Yongping,et al.Application of Chemical Mechanical Polishing in the Processing of Optical Crystals[J].Diamond & Abrasives Engineering,2012,32(1):23-28.
[4]彭兰,王林军,闵嘉华,等.碲锌镉晶片机械研磨和机械抛光工艺研究[J].功能材料,2011，42（5）:880-883.
Peng Lan,Wang Linjun,Min Jiahua,et al.Investigation of Mechanical Lapping and Polishing of CdZnTe Wafers[J]. Journal of Functional Materials,2011,42(5)：880-883.
[5]查钢强,介万奇,李强,等.CdZnTe单晶的机械抛光及其表面损伤层的测定[J].功能材料,2006,37（1）:120-122.
Zha Gangqiang,Jie Wanqi,Li Qiang,et al.Mechanical Polishing of CdZnTe Single Crystal and Measurement of Surface Damage Layer[J].Journal of Functional Materials,2006,37(1):120-122.
[6]张振宇,郭东明,康仁科,等.软脆功能晶体碲锌镉化学机械抛光[J].机械工程学报，2008,44(12):215-220.
Zhang Zhenyu,Guo Dongming,Kang Renke,et al.Chemical Mechanical Polishing Research of CdZnTe Functional Crystalline with Soft Brittle Nature[J].Chinese Journal of Mechanical Engineering,2008,44(12):215-220.
[7]李岩,康仁科,高航,等.碲锌镉晶体高效低损伤CMP工艺研究[J].人工晶体学报,2009,38(2):416-421.
Li Yan,Kang Renke,Gao Hang,et al.High-efficiency and Low-damage Chemical Mechanical Polishing Process of CdZnTe Crystals[J]. Journal of Synthetic Crystals,2009,38(2):416-421.
[8]邹微波,魏昕,杨向东,等.化学机械抛光过程抛光液作用的研究进展[J].金刚石与磨料磨具工程,2012,32(1):53-56.
Zou Weibo,Wei Xin,Yang Xiangdong,et al.Research Development of the Effects of Polishing Slurry on Chemical Mechanical Polishing Process[J].Diamond & Abrasives Engineering,2012,32(1):53-56.
[9]崔晓攀,方维政,张传杰,等.碲锌镉材料腐蚀坑及其缺陷特性研究[J].红外与激光工程,2010,39(3):405-410.
Cui Xiaopan,Fang Weizheng,Zhang Chuanjie,et al.Characteristics of CdZnTe Defects Revealed by Etch Pits[J].Infrared and Laser Engineering,2010,39(3):405-410.
[10]Lee H S,Jeong H D.Chemical and Mechanical Balance in Polishing of Electronic Materials for Defect-free Surfaces[J]. CIRP Annals-Manufacturing Technology,2009,58:485-490.
[11]Speight J G.Lange’s Handbook of Chemistry[M].New York:McGraw-Hill Professional,2005.

[1]	LI Qingzhong;SUN Sulei;LI Qiangqiang. Experimental Study on Homogeneity Mutual Polishing of Monocrystalline Silicon [J]. China Mechanical Engineering, 2019, 30(23): 2773-2777.
[2]	YUAN Julong1，3，4;MAO Meijiao1，2;LI Min1，3，4;LIU Shun2;WU Feng2;HU Zihua2;QIN Changjiang2. Optimization of CMP Processing Parameters for YG8 Cemented Carbide Inserts Based on RSM [J]. China Mechanical Engineering, 2018, 29(19): 2290-2297.
[3]	XU Zhiqiang1，2;YIN Shaohui3;JIANG Shengqiang1，2;ZHU Kejun1，2. ELID Grinding and CMP Compound Processing Technology for Sapphire Substrates [J]. China Mechanical Engineering, 2018, 29(11): 1310-1315.
[4]	Zeng Yifan, Yang Weiping, Wu Yongbo, Liu Manli. Mechanism of Surface Formation of Silicon Wafer Processed by Fixed Abrasive Polishing with Assistance of Ultrasonic Vibration and Experiments [J]. China Mechanical Engineering, 2016, 27(23): 3208-3214.
[5]	Huang Yishen1;Zhao Bingshan1,2;Huang Shuiquan1;You Hongwu1;Xu Xuefeng1. Pulse Electromagnetic Field-assisted Chemical Mechanical Polishing Utilizing Magnetic Composite Abrasives Slurry and Its Polishing Performance [J]. China Mechanical Engineering, 2014, 25(9): 1175-1179,1238.
[6]	TAO Wei-Jiang, MA Guo-Wei, JIN Qing-Bei, HUANG Yi-Shen, DIAO Ban-Shan, HU Xue-Feng. Study on Layer-by-layer Electrostatic Self-assembly Composite Abrasives Slurry and Its Silicon Wafer CMP Performance [J]. China Mechanical Engineering, 2013, 24(6): 742-745,780.
[7]	YANG Zhang-Yi, ZUO Dui-Wen, SUN Yu-Li, TONG Ju-Te. Research on Polishing Process of Glass-ceramics by Ice Fixed Abrasive Polishing Pad with Grooves [J]. China Mechanical Engineering, 2013, 24(1): 20-24.
[8]	LI Biao, LI Jun, GAO Beng, SHU Yong-Wei, LUO Hai-Jun, ZUO Dui-Wen. Study on Depth of Subsurface Crack Layer by Free and Fixed Abrasive Lapping [J]. China Mechanical Engineering, 2013, 24(07): 895-898,905.
[9]	KANG Jing, ZUO Dui-Wen, SUN Yu-Li, SHU Yong-Wei. Simulation and Experimental Research on Removal Rate Uniformity During Fixed Abrasive Polishing [J]. China Mechanical Engineering, 2011, 22(7): 803-807.
[10]	TAN Huan-Jiang, ZHANG Gao, LI Meng-Jun. Modeling and Simulation of Abrasive Flow in Chemical Mechanical Polishing Using Discrete Element Method [J]. China Mechanical Engineering, 2011, 22(5): 597-603.
[11]	DIAO Ping, WANG Zhi-Wei, YUAN Ju-Long. Analysis for 'Trap' Effect Influence Factors of Semi-fixed Abrasive Plate [J]. China Mechanical Engineering, 2011, 22(20): 2399-2403.
[12]	JIANG Jian-Zhong-1, YUAN Xiao-Lin-2, DIAO Yong-Wu-1. Factors Influencing Indentation Depth of a Particle into Wafer Surface in CMP [J]. China Mechanical Engineering, 2011, 22(15): 1783-1787.
[13]	WANG Jun, GENG Xue-Ling, LV Yu-Shan, ZHANG Liao-Yuan. Polishing Contact Pressure Analysis Based on Bionic Stannum Polishing Pad [J]. China Mechanical Engineering, 2011, 22(14): 1651-1655.
[14]	WANG Cai-Ling, KANG Ren-Ke, JIN Zhu-Ji. Research and Design on a Device to Apply Down-force in Chemical Mechanical Polishing Process [J]. China Mechanical Engineering, 2010, 21(7): 839-842,864.
[15]	Zhou Zhaozhong,;Lou Feiyan;Lü Binghai;Yuan Julong. Numerical Simulation of Slurry Flow Field in Chemical Mechanical Polishing Process [J]. J4, 2009, 20(10): 0-1154.