图形化蓝宝石衬底干法刻蚀工艺研究

doi:10.3969/j.issn.1004-132X.2021.24.014

摘要/Abstract

摘要： 为了缩短刻蚀时间以及提高发光二极管（LEDs）的发光性能，针对添加刻蚀辅助气体三氟甲烷（CHF3）的干法刻蚀工艺进行了研究。采用感应耦合等离子（ICP）干法刻蚀技术并通过正交试验研究了偏压功率、CHF3流量、自动压力控制蝶阀开合度（APC）对刻蚀速率和选择比的影响。试验结果表明：当偏压功率、CHF3流量和APC分别为350W、15 sccm和55%时，制程工艺有着更大的刻蚀选择比和蓝宝石刻蚀速率。使用最佳工艺参数制备出了大尺寸、高占空比、小弧度图形化蓝宝石衬底（PSS），与常规PSS相比，优化后的工艺参数制得的PSS高度增加了5.6%、占空比提高了4.6%。

关键词: 图形化蓝宝石衬底（PSS）, 三氟甲烷, 刻蚀选择比, 正交试验

Abstract: In order to shorten the etching time and improve the luminescence performance of the light-emitting diodes(LEDs), the dry etching processes of adding etching auxiliary gas trifluoromethane(CHF3) were studied. The effects of the bias power, the CHF3 flows and the degree of throttle butterfly pendulum auto pressure control valve（abb. APC） on the etch selectivity and the etch rate were investigated by orthogonal experiments during the inductively coupled plasma(ICP) dry etching processs. The experimental results show that the process has higher etch selectivity and etch rate when the bias power, the CHF3 flows and the APC is as 350 W, 15 sccm and 55%, respectively. The PSSs with large size, high pattern-sapphire ratio and small radian were obtained, compared with the conventional PSSs, the height and the pattern-sapphire ratio of optimized PSSs are improved by 5.6% and 4.6%, respectively.

Key words: , patterned sapphire substrate(PSS), trifluoromethane(CHF3), etch selectivity, orthogonal test

中图分类号:

TN312.8

侯想, 刘熠新, 钟梦洁, 林赛, 刘杨, 罗荣煌, 罗学涛, 张飒, . 图形化蓝宝石衬底干法刻蚀工艺研究[J]. 中国机械工程, 2021, 32(24): 3001-3007.

HOU Xiang, LIU Yixin, ZHONG Mengjie, LIN Sai, LIU Yang, LUO Ronghuang, LUO Xuetao, ZHANG Sa, . Research on Dry Etching Processes on PSSs[J]. China Mechanical Engineering, 2021, 32(24): 3001-3007.

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