关键词: 单晶SiC, 集群磁流变, 平面抛光, 表面粗糙度

Abstract:

The super smooth plane polishing theory and its test equipment of the cluster magnetorheological effect were applied in the plane polishing process of SiC single crystal. The results show that diamond abrasive has good polishing effects for SiC single crystal slice. The working gap vaule within 1.4mm can get good machining results, which can get more than 87% of surface roughness reduction within 30min. Also, the surface roughness becomes smaller by extending the finishing time, 86.4% of the surface roughness reduction is attained by 30min, but extend the finishing time, surface roughness tends to be stable. At last,cluster magnetorheological effect test equipment was used to polish 2 inches 6H-SiC single crystal slice with above optimizing process parameters. By using atomic force microscopy to measure the three-dimensional morphology and surface roughness of the slice before and after processing,it is found that surface roughness Ra downs to 1.9nm from 72.89nm after 30min, which proves that using cluster magnetorheological effect plane polishing test equipment to polish SiC single crystal is feasible and the results are obvious.

Key words: SiC single crystal, cluster magnetorheological, plane polishing; , surface roughness