基于直流-交变电场的单晶硅3D微纳结构制备方法研究

中国机械工程 ›› 2015, Vol. 26 ›› Issue (21): 2923-2928.

基于直流-交变电场的单晶硅3D微纳结构制备方法研究

焦晓东1;巢炎1;吴立群1;姚安琦1;楼洪梁2;李仁旺3

1.杭州电子科技大学，杭州，310018
2.中国计量学院，杭州，310018
3.浙江理工大学，杭州，310018

出版日期:2015-11-10 发布日期:2015-11-06
基金资助:
国家自然科学基金资助项目（51175134）；浙江省自然科学基金资助重点项目（LZ15E050004）；浙江省重中之重学科开放基金资助项目(140201201003-010，140201201003-010-003)

Study on Fabrication Method of Silicon 3D Micro-Nanostructure Based on Direct-alternating Electric Field

Jiao Xiaodong1;Chao Yan1;Wu Liqun1;Yao Anqi1;Lou Hongliang2;Li Renwang3

1.Hangzhou Dianzi University,Hangzhou,310018
2.China Jiliang University,Hangzhou,310018
3.Zhejiang Sci-Tech University,Hangzhou,310018

Online:2015-11-10 Published:2015-11-06
Supported by:

摘要/Abstract

摘要：

贵金属颗粒辅助化学腐蚀法在制备硅微纳线结构方面具有独特的作用。为了自动控制贵金属颗粒在单晶硅体内的运动方向，提高制备复杂3D硅微纳结构的可能性和结构品质，提出一种基于复合电场的单晶硅3D微纳结构制备方法。设计了直流-交变复合电场模型来研究贵金属颗粒辅助化学腐蚀法的机理，并分析了电场频率对单晶硅微纳结构的影响。设计了外电场控制模型及试验，讨论了电场强度和电场方向对腐蚀效率和腐蚀轨迹的作用规律。微结构观测结果验证了利用电场控制腐蚀加工过程的可行性，得到了优化的电场电流密度和电场频率工作区间，为制备3D硅微纳结构提供了新的试验思路和机理分析途径。

关键词: 贵金属颗粒, 辅助化学腐蚀法, 直流交变电场, 3D微纳结构, 可控制备

Abstract:

MaCE of silicon (Si) has a superiority and irreplaceable advantages to fabricate Si micro&nanostructures. In order to simplify technological process of controlling etching direction and fabricate Si 3D micro&nanostructures, a new method of fabricating silicon micro&nanostructures was presented by using direct-alternating electric field to control the etching direction. A direct-alternating electric field control model was formulated to study the mechanism of MaCE in the electric field, and the effects of different frequencies of electric field on the Si micro&nanostructures were discussed. An external electric field control model and an experiment were designed to study the action law of electric field intensity and direction on etching effienciency and direction.The results of micro-structure inspection demonstrate that electric field can effectively control etching direction and has the ability to fabricate Si 3D micro&nanostructures. Optimizations of the electric current density and electric field frequency range were obtained,and a new method was provided for experiments and mechanism analysis.

Key words: noble metal particle, metal-assisted chemical etching(MaCE);direct-alternating electric field, 3D micro-nanostructure, controllable fabrication

中图分类号:

焦晓东, 巢炎, 吴立群, 姚安琦, 楼洪梁, 李仁旺. 基于直流-交变电场的单晶硅3D微纳结构制备方法研究[J]. 中国机械工程, 2015, 26(21): 2923-2928.

Jiao Xiaodong, Chao Yan, Wu Liqun, Yao Anqi, Lou Hongliang, Li Renwang. Study on Fabrication Method of Silicon 3D Micro-Nanostructure Based on Direct-alternating Electric Field[J]. China Mechanical Engineering, 2015, 26(21): 2923-2928.

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