Abstract:

Low-k/Cu Damascene interconnects integration
technology provides the direction as well as the challenges in the fabrication of integrated circuits(IC) wafers.These challenges arise primarily from the
mechanical fragility of such dielectrics,which may not withstand the force applied during chemical mechanical planarization(CMP).As an extension of conventional CMP technology,the recently invented electro-chemical mechanical planarization (ECMP) bears an obvious compensating advantage over CMP,potentially allows low down-pressure planarization of newer interconnect structures containing easily breakable porous dielectrics.
Comparison was made between the ECMP and CMP,and the current state and progress trend of the ECMP research was reviewed.Tribo-electrochemistry theory
was thought to be underlying foundation of ECMP technology.And the mechanisms of material removal and super-smooth surface formation during ECMP process can only be revealed by investigating in detail the interactions among the applied voltage,
friction and wear,and chemical reaction in the process.

Key words: electro-chemical mechanical planarization(ECMP);low-k dielectric;Cu Damascene interconnects;tribo-electrochemistry

摘要：

大马士革(Damascene)结构的Cu/低k介质材料互连技术为集成电路芯片制造提出了方向和挑战。电化学机械平整化(ECMP)作为化学机械平整化（CMP）的一种拓展加工手段，可对传统CMP技术进行补偿，可对含有易损多孔电介质材料的新型互连结构进行低压力平整化。比较了ECMP和CMP 的特点，
对ECMP技术的研究现状和发展趋势进行了综述。指出ECMP过程控制的深层次的技术基础是摩擦电化学理论，只有深入系统地研究ECMP过程中的外加电势、摩擦磨损、化学反应三者间的相互作用，才能揭示ECMP过程中材料的加速去除原理和超光滑无损伤表面的形成机理。

关键词: 电化学机械平整化(ECMP)；低k介质；Cu大马士革互连；摩擦电化学