J4 ›› 2008, Vol. 19 ›› Issue (22): 0-2649.

• 材料工程 •    

高玉飞;葛培琪;赵慧利;张磊   

  • 收稿日期:1900-01-01 修回日期:1900-01-01 出版日期:2008-11-25 发布日期:2008-11-25

Study on Effects of Monocrystalline Silicon Anisotropy on Slicing Wafer Quality Using Fixed-abrasive Wire Saw 

Gao Yufei;Ge Peiqi;Zhao Huili;Zhang Lei   

  • Received:1900-01-01 Revised:1900-01-01 Online:2008-11-25 Published:2008-11-25

摘要: 将线锯切割单晶硅的锯口形状近似为半圆槽,并将其理解为由许多平行于锯丝轴向的离散表面组成,建立了固结磨料线锯切割单晶硅模型。通过保持锯丝两边锯切材料去除率的对称性,在单晶硅的(100)、(110)和(111)三个晶面,选择不同的锯丝切入方向,从理论上分析了各向异性对线锯切割硅片质量的影响。分析得出:锯切(100)晶片和(110)晶片时,
锯丝切入方向的改变不影响硅片表面质量;锯切(111)晶片时,
选择[110]、[1]10]、[011]、[011]、[101]和[101]晶向进行锯切,可有效提高晶片的全局平面度,降低晶片表面法线偏移量,降低硅片翘曲度,提高硅片表面质量。实验验证了分析的正确性。




关键词: 线锯;单晶硅;切片;各向异性

Abstract: The kerf shape formed during fixed-abrasive wire saw slicing monocrystalline silicon was considered as a semi-circular groove,and was visualized to regard as that formed by many discrete planes that parallel to the axial direction of the wire,so the model of wiresawing silicon wafers was founded.The effect of crystal anisotropy on the wafer quality sliced by wire saw was studied theoretically by choosing different wire approach directions (WAD) based on maintaining the symmetry in material removal rates on the two sides of the wire. Analytical results of slicing the most common(100),(110) and
(111) wafers are that any WAD can be chosen for slicing (100) and (110) crystals that will not influence surface finish,but for (111) wafer,there are six WADs [110],[110],[011],[011],[101] and [101] that can give the wafer a better flatness and less surface normal deviation effectively,hence improve silicon wafers quality.And
the analysis correctness was verified by experimental results.

Key words: wire saw;monocrystalline silicon;slicing;anisotropy

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