关键词: 电化学机械平整化(ECMP)；低k介质；Cu大马士革互连；摩擦电化学

Abstract:

Low-k/Cu Damascene interconnects integration
technology provides the direction as well as the challenges in the fabrication of integrated circuits(IC) wafers.These challenges arise primarily from the
mechanical fragility of such dielectrics,which may not withstand the force applied during chemical mechanical planarization(CMP).As an extension of conventional CMP technology,the recently invented electro-chemical mechanical planarization (ECMP) bears an obvious compensating advantage over CMP,potentially allows low down-pressure planarization of newer interconnect structures containing easily breakable porous dielectrics.
Comparison was made between the ECMP and CMP,and the current state and progress trend of the ECMP research was reviewed.Tribo-electrochemistry theory
was thought to be underlying foundation of ECMP technology.And the mechanisms of material removal and super-smooth surface formation during ECMP process can only be revealed by investigating in detail the interactions among the applied voltage,
friction and wear,and chemical reaction in the process.

Key words: electro-chemical mechanical planarization(ECMP);low-k dielectric;Cu Damascene interconnects;tribo-electrochemistry